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| 2SC4004 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4004
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=1mA , IB=0
VCEsat Collector-emitter saturation voltage IC=0.2A ;IB=0.04A
VBEsat Base-emitter saturation voltage
IC=0.2A; IB=0.04A
ICBO
Collector cut-off current
VCB=900V; IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE-1
DC current gain
IC=0.05A ; VCE=5V
hFE-2
DC current gain
IC=0.5A ; VCE=5V
fT
Transition frequency
IC=0.05A; VCE=10V;f=1MHz
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=0.2A ;IB1=0.04A;
IB2=-0.04A;VCC=250V
MIN TYP. MAX UNIT
800
V
1.5
V
1.0
V
50
A
50
A
6
3
4
MHz
1.0
s
3.0
s
1.0
s
2
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