2SC4001 Datasheet, PDF (2/2 Pages) NEC – NPN SILICON POWER TRANSISTOR

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4001
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
ICBO
Collector Cutoff Current
VCB= 200V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
hFE
DC Current Gain
IC= 10m A ; VCE=10V
VCE(sat) Collector-Emitter Saturation Voltage IC= 10mA ;IB=1mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 10mA ;IB= 1mA
fT
Current-Gain—Bandwidth Product IE= 30mA ; VCE= 30V
COB
Output Capacitance
IE= 0 ; VCB= 30V;ftest= 1.0MHz
MIN MAX UNIT
100
nA
100
nA
60
300
0.3
V
1.2
V
200
MHz
3.5
pF
 hFE Classifications
M
L
K
60-120 100-200 160-300
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