2SC3998 Datasheet, PDF (2/2 Pages) Sanyo Semicon Device – Very High-Definition Color Display Horizontal Deflection Output Applications

isc Silicon NPN Power Transistor
isc Product Specification
2SC3998
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
800
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 20A; IB=5A
5.0
V
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IC= 20A; IB=5A
VCB= 800V; IE= 0
1.5
V
10 μA
ICES
Collector Cutoff Current
VCE= 1500V; RBE= 0
1.0 mA
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
1.0 mA
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
8
30
hFE-2
DC Current Gain
IC= 20A; VCE= 5V
4
8
tstg
Storage Time
tf
Fall Time
IC= 12A, IB1=2.4A; IB2= -4.8A
3.0 μs
0.2 μs
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