English
Language : 

2SC3994 Datasheet, PDF (2/2 Pages) Sanyo Semicon Device – Switching Regulator Applications
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3994
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0
800
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 12A; IB=2.4A
VBE(sat) Base-Emitter Saturation Voltage
IC= 12A; IB=2.4A
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
2.0 V
1.5 V
10 μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
10 μA
hFE-1
DC Current Gain
IC= 1.6A; VCE= 5V
10
60
hFE-2
DC Current Gain
IC= 8A; VCE= 5V
8
tstg
Storage Time
tf
Fall Time
VCC=400V,5IB1=-2.5IB2=IC=20
A,RL=20Ω
3.0 μs
0.3 μs
isc website:www.iscsemi.cn
2 isc & iscsemi is registered trademark