2SC3992 Datasheet, PDF (2/2 Pages) Sanyo Semicon Device – Switching Regulator Applications

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3992
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEX(SUS) Collector-Emitter Sustaining Voltage IC=10mA; IB=0
800
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; RBE = ∞
1100
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0
800
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
7
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB=1.2A
2.0
V
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 6A; IB=1.2A
VCB= 800V; IE= 0
VEB= 5V; IC= 0
1.5
V
10 μA
10 μA
hFE-1
DC Current Gain
IC= 0.8A; VCE= 5V
10
60
hFE-2
DC Current Gain
IC= 4A; VCE= 5V
8
Ton
On Time
tstg
Storage Time
tf
Fall Time
VCC=400V,5IB1=-2.5IB2=IC=8A,
RL=50Ω
0.5 μs
3.0 μs
0.3 μs
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