2SC3989 Datasheet, PDF (2/2 Pages) Sanyo Semicon Device – Switching Regulator Applications

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3989
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA ; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1m A; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 12A; IB= 2.4A
VBE(sat) Base-Emitter Saturation Voltage
IC= 12A; IB= 2.4A
ICBO
Collector Cutoff Current
VCB= 500V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 2.4A ; VCE= 5V
hFE-2
DC Current Gain
IC= 12A ; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 2.4A ; VCE= 10V
COB
Output Capacitance
IE= 0 ; VCB= 10V
MIN TYP. MAX UNIT
500
V
800
V
7
V
1.0
V
1.5
V
10 μA
10 μA
15
50
8
18
MHz
260
pF
 hFE-1 Classifications
L
M
N
15-30 20-40 30-50
isc website：www.iscsemi.com
2 _{isc & iscsemi is registered trademark}