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| 2SC3981 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3981
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 0.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB=B 0.6A
ICBO
Collector Cutoff Current
VCB= 900V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE-1
DC Current Gain
IC= 0.1A; VCE= 5V
hFE-2
DC Current Gain
IC= 3A; VCE= 5V
fT
Current-GainâBandwidth Product
IC= 0.5A; VCE= 5V; f= 1MHz
Switching Times
ton
Turn-on Time
ts
Storage Time
tf
Fall Time
IC= 3A; IB1= 0.6A; IB2= -1.2A;
VCC= 250V
MIN TYP. MAX UNIT
800
V
1.5
V
1.5
V
50 μA
50 μA
8
6
15
MHz
0.7 μs
2.5 μs
0.3 μs
isc Websiteï¼www.iscsemi.cn
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