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| 2SC3974 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3974
CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0
500
V
VCE(sat) Collector-emitter saturation voltage IC=4A ;IB=0.8A
1.0
V
VBE(sat) Base-emitter saturation voltage
IC=4A ;IB=0.8A
1.5
V
ICBO
Collector cut-off current
VCB=800V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1
mA
hFE-1
DC current gain
IC=0.1A ; VCE=5V
15
hFE-2
DC current gain
IC=4A ; VCE=5V
8
fT
Transition frequency
IC=0.5A ; VCE=10V,f=1MHz
20
MHz
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=4A ;IB1=0.8A ,IB2=-1.6A
VCC=200V
1.0
μs
3.0
μs
0.3
μs
2
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