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| 2SC3973B Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0
VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A
VBEsat Base-emitter saturation voltage
IC=4A; IB=0.8A
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE-1
DC current gain
VCB=1000V; IE=0
VEB=5V; IC=0
IC=0.1A ; VCE=5V
hFE-2
DC current gain
IC=4A ; VCE=5V
Product Specification
2SC3973B
MIN TYP. MAX UNIT
500
V
1.0
V
1.5
V
100
A
100
A
15
8
2
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