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| 2SC3969 Datasheet, PDF (2/2 Pages) Rohm – High Voltage Switching Transistor(400V, 2A) | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3969
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1.0A ; IB1= 0.1A, L= 1mH
V(BR)CBO Collector-Base Breakdown Voltage
IC= 50μA; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB=B 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50μA; IC= 0
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 1A; IB=B 0.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 1A; IB=B 0.2A
ICBO
Collector Cutoff Current
VCB= 400V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE
DC Current Gain
IC= 0.1A ; VCE= 5V
fT
Current-GainâBandwidth Product
IE= -0.1A ; VCE= 10V
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1.0MHz
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 0.8A ; IB1= -IB2= 0.08A;
RL= 250Ω;VCCâ 200V
MIN TYP. MAX UNIT
400
V
400
V
400
V
7
V
1.0
V
1.5
V
10 μA
10 μA
25
50
10
MHz
30
pF
1.0 μs
2.5 μs
1.0 μs
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