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| 2SC3944 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planar type(For low-frequency driver and high power amplification) | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3944 2SC3944A
CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
2SC3944
2SC3944A
IC=1mA; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=10μA; IC=0
VCEsat Collector-emitter saturation voltage IC=0.5 A;IB=50m A
VBEsat Base-emitter saturation voltage
IC=0.5 A;IB=50m A
ICBO
Collector
cut-off current
2SC3944 VCB=150V; IE=0
2SC3944A VCB=180V; IE=0
hFE-1
DC current gain
IC=150mA ; VCE=10V
hFE-2
DC current gain
IC=500mA ; VCE=5V
fT
Transition frequency
IC=50mA ; VCB=10V
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
 hFE classifications
Q
R
95-155
130-220
MIN TYP. MAX UNIT
150
V
180
5
V
2.0
V
2.0
V
10
μA
95
220
50
200
MHz
30
pF
2
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