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| 2SC3902 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3902
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC= 10μA; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; RBE= â
V(BR)EBO Emitter-Base Breakdown Vltage
IE= 10μA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 500mA; IB= 50mA
ICBO
Collector Cutoff Current
VCB= 120V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE
DC Current Gain
IC= 10mA; VCE= 5V
fT
Current-GainâBandwidth Product
IC= 50mA; VCE= 10V
COB
Output Capacitance
Switching Times
IE= 0; VCB= 10V, ftest= 1MHz
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 0.7A, IB1= -IB2= 70mA
RL= 14.3Ω; VCC= 100V
MIN TYP. MAX UNIT
180
V
160
V
6
V
0.45 V
1.2
V
0.1 μA
0.1 μA
100
400
120
MHz
14
pF
0.04
μs
1.2
μs
0.08
μs
 hFE Classifications
R
S
T
100-200 140-280 200-400
isc Websiteï¼www.iscsemi.cn
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