 English |
|
|
|
|
|
|
|
| 2SC3895 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – Ultrahigh-Definition Display Horizontal Deflection Output Applications | |||
| |||
| ◁ |
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0
VCEsat Collector-emitter saturation voltage IC=5A ;IB=1.2A
VBEsat Base-emitter saturation voltage
IC=5A ;IB=1.2A
ICBO
Collector cut-off current
VCB=800V ;IE=0
ICES
Collector cut-off current
VCE=1500V; RBE=0
IEBO
Emitter cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
Switching times
VEB=4V ;IC=0
IC=1A ; VCE=5V
IC=5A ; VCE=5V
tstg
Storage time
tf
Fall time
IC=4A ; VCC=200V
IB1=0.8A; IB2=1.6A
RL=50Ω
Product Specification
2SC3895
MIN TYP. MAX UNIT
800
V
5.0
V
1.5
V
10
μA
1.0
mA
1.0
mA
8
4
8
3.0
μs
0.1
0.2
μs
2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese