2SC3893A Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3893A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 200mA; IC= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 50μA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 6A; IB= 1.5A
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 1A; VCE= 5V
VECF
C-E Diode Forward Voltage
IF= 6A
fT
Current-Gain—Bandwidth Product
IC= 0.1A; VCE= 10V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest=1.0MHz
Switching Times , Resistive load
tstg
Storage Time
tf
Fall Time
ICP= 6A, IB1= 1.2A; IB2= -2.4A;
RL= 33.3Ω
5
V
1500
V
5.0
V
1.5
V
10 μA
66
200 mA
8
2.0
V
3
MHz
210
pF
2.5 μs
0.2 μs
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