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| 2SC3893 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=200mA , IC=0
VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.5A
VBEsat Base-emitter saturation voltage
IC=6A ;IB=1.5A
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE
DC current gain
VCB=500V; IE=0
VEB=5V; IC=0
IC=1A ; VCE=5V
fT
Transition frequency
IC=0.1A ; VCE=10V
COB
Collector output capacitance
IE=0 ; VCB=10V;f=1MHz
VF
Diode forward voltage
ts
Storage time
tf
Fall time
IF=6A
Resistive load
ICP=6A ;IB1=1.2A;IB2=-2.4A
RL=33.3Ω
Product Specification
2SC3893
MIN TYP. MAX UNIT
5
V
5.0
V
1.5
V
10 μA
66
200 mA
8
12
1
3
MHz
210
pF
2.0
V
2.5 μs
0.2 μs
2
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