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| 2SC3886A Datasheet, PDF (2/3 Pages) Toshiba Semiconductor – TRANSISTOR SILICON NPN / 1400V / 8A / 50W | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.5A
VBEsat Base-emitter saturation voltage
IC=6A ;IB=1.5A
ICBO
Collector cut-off current
VCB=1500V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=1A ; VCE=5V
fT
Transition frequency
IC=0.1A ; VCE=10V
COB
Collector output capacitance
IE=0 ; VCB=10V;f=1MHz
ts
Storage time
tf
Fall time
Resistive load
ICP=6A ;IB1=-IB2=1.2A
RL=33.3Ω
Product Specification
2SC3886A
MIN TYP. MAX UNIT
600
V
5.0
V
1.5
V
1.0 mA
10
μA
8
15
1
3
MHz
210
pF
2.5
μs
0.15 μs
2
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