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| 2SC3884 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3884
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB=B 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB=B 1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB=B 1A
ICBO
Collector Cutoff Current
VCB= 1400V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 1A; VCE= 5V
fT
Current-GainâBandwidth Product
IC= 0.1A; VCE= 10V
COB
Output Capacitance
Switching Times , Resistive load
IE= 0; VCB= 10V; ftest= 1.0MHz
tstg
Storage Time
tf
Fall Time
ICP= 4A, IB1= 0.8A; IB2= -1.6A;
RL= 50Ω
MIN TYP. MAX UNIT
600
V
5.0
V
1.5
V
1.0 mA
10 μA
8
3
MHz
210
pF
2.5 μs
0.15 μs
isc Websiteï¼www.iscsemi.cn
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