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| 2SC3871 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – Silicon NPN triple diffusion planar type | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3871
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB=B 1A
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.1A; VCE= 5V
hFE-2
DC Current Gain
IC= 5A; VCE= 5V
fT
Current-GainâBandwidth Product
IC= 0.5A; VCE= 10V
Switching Times
ton
Turn-on Time
ts
Storage Time
tf
Fall Time
IC= 5A; IB1= 1A; IB2= -2A;
VCC= 150V
MIN TYP. MAX UNIT
400
V
1.0
V
1.5
V
100 μA
100 μA
15
8
25
MHz
0.7 μs
2.0 μs
0.3 μs
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