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| 2SC3866 Datasheet, PDF (2/4 Pages) Fuji Electric – TRIPLE DIFFUSED PLANER TYPE | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA , IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA , IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA , IC=0
VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2A
VBEsat Base-emitter saturation voltage
IC=1A; IB=0.2A
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE
DC current gain
Switching times
VCB=900V; IE=0
VEB=10V; IC=0
IC=1A ; VCE=5V
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=2A; IB1=0.4A
IB2=-0.8A;RL=150
Pw=20 s,Duty 2%
Product Specification
2SC3866
MIN TYP. MAX UNIT
800
V
900
V
10
V
1.0
V
1.5
V
1.0
mA
1.0
mA
10
1.0
s
4.0
s
0.8
s
2
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