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| 2SC3636 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – Very High-Definition Display Horizontal Deflection Output Applications | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0
VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A
VBEsat Base-emitter saturation voltage
IC=4A ;IB=0.8A
ICBO
Collector cut-off current
VCB=500V; IE=0
ICES
Collector cut-off current
VCE=900V; RBE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=0.8A ; VCE=5V
Switching times
ts
Storage time
tf
Fall time
VCC=200V;IC=4A;
IB1=0.8A; IB2=-1.6A
Product Specification
2SC3636
MIN TYP. MAX UNIT
500
V
2.0
V
1.5
V
10
A
0.5 mA
1.0 mA
8
3.0
s
0.1 0.2
s
2
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