 English |
|
|
|
|
|
|
|
| 2SC3297 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors | |||
| |||
| ◁ |
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA , IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA , IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA , IC=0
VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.2A
VBE
Base-emitter on voltage
IC=0.5A ; VCE=5V
ICBO
Collector cut-off current
VCB=30V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.5A ; VCE=2V
hFE-2
DC current gain
IC=3A ; VCE=5V
fT
Transition frequency
IC=0.5A ; VCE=5V
Product Specification
2SC3297
MIN TYP. MAX UNIT
30
V
30
V
5
V
1.0
V
1.0
V
10
A
10
A
70
280
20
100
MHz
2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese