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| 2SC3061 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3061
CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=â
V(BR)CBO Collector-base breakdown voltage
IC=1mA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCE(sat) Collector-emitter saturation voltage IC=4A; IB=0.8A
VBE(sat) Base-emitter saturation voltage
IC=4A; IB=0.8A
ICBO
Collector cut-off current
VCB=1000V; IE=0
VCB=1000V; IE=0, TC=100â
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE
DC current gain
IC=4A ; VCE=5V
fT
Transition frequency
Cob
Output capacitance
Switching times
IC=1A ; VCE=10V
IE=0; VCB=10V,f=1MHz
tr
Rise time
tstg
Storage time
tf
Fall time
VCC=400V; IC=4A
IB1=0.4A;IB2=-1.2A;
MIN TYP. MAX UNIT
850
V
1200
V
7
V
1.5
V
2.0
V
100 μA
1
mA
100 μA
10
30
15
MHz
220
pF
0.5 μs
3.5 μs
0.3 μs
2
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