2SC2681 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors

Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_CEsat Collector-emitter saturation voltage I_C=4.5A ;I_B=0.45A
V_BE
Base-emitter on voltage
I_C=4.5A ; V_CE=2V
I_CBO
Collector cut-off current
V_CB=80V; I_E=0
I_EBO
Emitter cut-off current
h_{FE -1}
DC current gain
h_{FE -2}
DC current gain
V_EB=5V; I_C=0
I_C=1A ; V_CE=2V
I_C=4.5A ; V_CE=2V
C_OB
Output capacitance
I_E=0 ; V_CB=10V;f=1MHz
f_T
Transition frequency
I_C=1A ; V_CE=2V
‹ h_FE-1 classifications
R
Q
60-120
100-200
Product Specification
2SC2681
MIN TYP. MAX UNIT
0.6
1.5
V
1.2
2.0
V
50
A
50
A
60
200
40
230
pF
80
MHz
2