2SC2653H Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – Large Pc

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
Product Specification
2SC2653H
ELECTRICAL CHARACTERISTICS
T_C=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_CEO
Collector-Emitter Sustaining Voltage I_C=5mA ; I_B= 0; T_a=100℃
V_CBO
Collector-Base Sustaining Voltage
I_C=0.1mA ; I_E= 0; T_a=100℃
V_EBO
Emitter-Base Breakdown Voltage
I_E= 0.1mA; I_C= 0
V_CE(sat) Collector-Emitter Saturation Voltage IC=50mA; IB= 5mA
I_CBO
Collector Cutoff Current
V_CB=200V ; I_E= 0
I_EBO
Emitter Cutoff Current
V_EB= 5V; I_C= 0
h_FE
DC Current Gain
I_C= 10mA ; V_CE=10V
C_OB
Output Capacitance
I_E= 0 ; V_CB=50V;f= 1.0MHz
f_T
Current-Gain—Bandwidth Product
I_E=-10mA ; V_CE=30V
MIN TYP. MAX UNIT
300
V
480
V
7.5
V
1
V
2
μA
2
μA
40
250
4.5
pF
50
MHz
isc Website：www.iscsemi.cn
2 _{isc & iscsemi is registered trademark}