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| 2SC2615 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=10mA; IC=0
VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A
VBEsat Base-emitter saturation voltage
IC=4A ;IB=0.8A
ICBO
Collector cut-off current
VCB=400V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=4A ; VCE=5V
hFE-2
DC current gain
IC=8A ; VCE=5V
Product Specification
2SC2615
MIN TYP. MAX UNIT
400
V
7
V
1.0
V
1.5
V
0.1 mA
0.1 mA
15
7
2
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