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| 2SC2612 Datasheet, PDF (2/4 Pages) Hitachi Semiconductor – Silicon NPN Triple Diffused | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ,RBE= ,L=100mH
V(BR)EBO Emitter-base breakdown voltage
IE=10mA; IC=0
VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.3A
VBEsat Base-emitter saturation voltage
IC=1.5A; IB=0.3A
ICBO
Collector cut-off current
VCB=400V; IE=0
ICEO
Collector cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
Switching times
VCE=350V; RBE=
IC=1.5A ; VCE=5V
IC=3A ; VCE=5V
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=3.0A IB1=- IB2=0.6A
VCC 150V
Product Specification
2SC2612
MIN TYP. MAX UNIT
400
V
7
V
1.0
V
1.5
V
100
A
100
A
15
7
1.0
s
1.2
2.5
s
1.0
s
2
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