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2SC2591 Datasheet, PDF (2/4 Pages) List of Unclassifed Manufacturers – AF Driver,High Power Amplifier Amplifier Complementary Pair with 2SA1111,2SA1112
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2591 2SC2592
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
2SC2591
2SC2592
IC=0.1mA ,IB=0
VEBO
Emitter-base breakdown voltage
IE=10 A ,IC=0
VCEsat Collector-emitter saturation voltage IC=0.5A; IB=50mA
VBEsat Base-emitter saturation voltage
IC=0.5A; IB=50mA
ICBO
Collector cut-off current
VCB=120V; IE=0
IEBO
Emitter cut-off current
VEB=4V; IC=0
hFE-1
DC current gain
IC=150mA ; VCE=10V
hFE-2
DC current gain
IC=500mA ; VCE=5V
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT
Transition frequency
IC=50mA ; VCE=10V
‹ hFE-1 Classifications
Q
R
S
90-155 130-220 185-330
MIN TYP. MAX UNIT
150
V
180
5
V
0.5
2.0
V
1.0
2.0
V
1
A
1
A
90
330
50
20
pF
200
MHz
2