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| 2SC2588 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=1mA; RBE=â
V(BR)CBO Collector-base breakdown voltage
IC=50μA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=50μA; IC=0
VCE(sat) Collector-emitter saturation voltage IC=5 A;IB=0.5 A
VBE
Base-emitter voltage
IC=5A ; VCE=5V
ICBO
Collector cut-off current
VCB=120V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=2A ; VCE=5V
hFE-2
DC current gain
IC=7A ; VCE=5V
fT
Transition frequency
IC=1A ; VCB=10V,f=1MHz
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
Product Specification
2SC2588
MIN TYP. MAX UNIT
120
V
120
V
5
V
1.8
V
1.7
V
50 μA
50 μA
60
200
40
60
MHz
170
pF
2
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