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| 2SC2582 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=2mA ;IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
VCEsat Collector-emitter saturation voltage IC=500mA ;IB=50mA
ICEO
Collector cut-off current
VCE=20V; IB=0
ICBO
Collector cut-off current
VCB=20V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=500mA ; VCE=10V
hFE-2
DC current gain
IC=1A ; VCE=5V
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
fT
Transition frequency
IC=50mA ; VCE=10V
 hFE-1 Classifications
Q
R
S
85-170 120-240 170-340
Product Specification
2SC2582
MIN TYP. MAX UNIT
35
V
45
V
0.5
V
100
A
0.1
A
10
A
85
340
50
20
pF
200
MHz
2
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