2SC2562 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – SILICON NPN EXPITAXIAL TYPE (PCT PROCESS)

Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_(BR)CEO Base-emitter breakdown voltage
I_C=10mA , I_B=0
V_CEsat Collector-emitter saturation voltage I_C=3A; I_B=0.15A
V_BEsat Base-emitter saturation voltage
I_C=3A; I_B=0.15A
I_CBO
Collector cut-off current
I_EBO
Emitter cut-off current
h_{FE –1}
DC current gain
V_CB=50V; I_E=0
V_EB=5V; I_C=0
I_C=1A ; V_CE=1V
h_{FE -2}
DC current gain
I_C=3A ; V_CE=1V
f_T
Transition frequency
I_C=1A ; V_CE=4V
C_ob
Output capacitance
f=1MHz ; V_CB=10V
Switching times
t_on
Turn-on time
t_s
Storage time
t_f
Fall time
I_C=3A ;I_B1=- I_B2=0.15A
R_L=10 ,V_CC=30V
‹ h_FE-1 Classifications
O
Y
70-140
120-240
Product Specification
2SC2562
MIN TYP. MAX UNIT
50
V
0.4
V
1.2
V
1
A
1
A
70
240
30
120
MHz
80
pF
0.1
s
1.0
s
0.1
s
2