2SC2527 Datasheet, PDF (2/3 Pages) Fujitsu Component Limited. – SILICON HIGH SPEED POWER TRANSISTOR

Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_(BR)CEO Collector-emitter breakdown voltage I_C=1mA ; R_BE=
V_(BR)CBO Collector-base breakdown voltage
I_C=50 A ; I_E=0
V_(BR)EBO Emitter-base breakdown voltage
I_E=50 A ; I_C=0
V_CEsat Collector-emitter saturation voltage I_C=5A; I_B=0.5A
V_BE
Base-emitter on voltage
I_C=5 A ; V_CE=5V
I_CBO
Collector cut-off current
V_CB=120V ;I_E=0
I_CEO
Collector cut-off current
V_CE=120V; I_B=0
I_EBO
Emitter cut-off current
V_EB=7V ;I_C=0
h_FE-1
DC current gain
I_C=1 A ; V_CE=5V
h_{FE -2}
DC current gain
I_C=5 A ; V_CE=5V
f_T
Transition frequency
I_C=1 A ; V_CE=10V
C_OB
Output capacitance
I_E=0 ; V_CB=10V; f=1MHz
Switching times
t_r
Rise time
t_s
Storage time
t_f
Fall time
I_C=7.5 A; R_L=4
I_B1=-I_B2=0.75A
Product Specification
2SC2527
MIN TYP. MAX UNIT
120
V
120
V
7
V
1.8
V
1.7
V
50
A
1
mA
50
A
60
200
40
80
MHz
180
pF
0.3
s
1.3
s
0.2
s
2