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| 2SC2486 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A
VBE
Base-emitter on voltage
IC=5A;VCE=5V
ICBO
Collector cut-off current
VCB=120V; IE=0
IEBO
Emitter cut-off current
VEB=3V; IC=0
hFE-1
DC current gain
IC=0.02A ; VCE=5V
hFE-2
DC current gain
IC=1A ; VCE=5V
hFE-3
DC current gain
IC=5A ; VCE=5V
fT
Transition frequency
IC=0.5A ; VCE=5V
 hFE-2 Classifications
R
Q
P
40-80 60-120 100-200
Product Specification
2SC2486
MIN TYP. MAX UNIT
120
V
2.0
V
1.8
V
50
A
50
A
20
40
200
20
20
MHz
2
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