2SC2443 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – High Current Capability

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2433
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= 50μA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA ; IC= 0
VCE_(sat) Collector-Emitter Saturation Voltage IC= 15A; IB= 1.5A
VBE_(sat) Base-Emitter Saturation Voltage
IC= 15A; IB= 1.5A
ICBO
Collector Cutoff Current
VCB= 120V ; IE= 0
ICEO
Collector Cutoff Current
VCE= 120V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE-1
DC Current Gain
IC= 3A ; VCE= 5V
hFE-2
DC Current Gain
IC= 30A ; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= -10V; f= 1.0MHz
fT
Current-Gain—Bandwidth Product
IC= 2A ; VCE= 10V
Switching Times
t_r
Rise Time
t_stg
Storage Time
t_f
Fall Time
IC= -15A; IB1= -IB2= -1.5A;
RL= 2Ω
MIN TYP. MAX UNIT
120
V
120
V
5
V
1.5 V
2.0 V
50 μA
1 mA
50 μA
35
200
7
1000
pF
60
MHz
0.10
μs
0.10
μs
0.10
μs
isc website：www.iscsemi.cn
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