2SC2440 Datasheet, PDF (2/4 Pages) Fuji Electric – TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE HIGH SPEED SWITCHING

Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_(BR)CEO Collector-emitter breakdown voltage I_C=10mA ; I_B=0
V_(BR)CBO Collector-base breakdown voltage
I_C=100 A ; I_E=0
V_(BR)EBO Emitter-base breakdown voltage
I_E=100 A ; I_C=0
V_CEsat Collector-emitter saturation voltage I_C=2A; I_B=0.4A
V_BEsat Base-emitter saturation voltage
I_C=2A; I_B=0.4A
I_CBO
Collector cut-off current
V_CB=400V ;I_E=0
I_EBO
Emitter cut-off current
V_EB=7V; I_C=0
h_FE
DC current gain
I_C=2 A ; V_CE=5V
Switching times
t_on
Turn-on time
t_s
Storage time
t_f
Fall time
I_C=3A; I_B1=0.3A
I_B2=-0.3A;R_L=20
Product Specification
2SC2440
MIN TYP. MAX UNIT
400
V
450
V
7
V
0.8
V
1.5
V
100
A
100
A
15
1.5
s
4.0
s
1.3
s
2