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2SC2438 Datasheet, PDF (2/4 Pages) List of Unclassifed Manufacturers – MOLD TYPE BIPOLAR TRANSISTORS
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0
V(BR)CBO Collector-base breakdown voltage
IC=100 A ; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=100 A ; IC=0
VCEsat Collector-emitter saturation voltage IC=4A; IB=0.4A
VBEsat Base-emitter saturation voltage
IC=4A; IB=0.4A
ICBO
Collector cut-off current
VCB=150V ;IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE
DC current gain
IC=4 A ; VCE=1V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=4A; IB1=0.4A
IB2=-0.4A;RL=5
Product Specification
2SC2438
MIN TYP. MAX UNIT
80
V
150
V
7
V
0.5
V
1.2
V
100
A
100
A
30
0.5
s
2.5
s
0.3
s
2