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| 2SC2415 Datasheet, PDF (2/2 Pages) Panasonic Semiconductor – SILICON NPN TRIPLE DIFFUSED MESA | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC2415
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A ;L= 25mH
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 0.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB=B 0.6A
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.1A ; VCE= 5V
hFE-2
DC Current Gain
IC= 3A ; VCE= 5V
fT
Current-GainâBandwidth Product IC= 0.5A ; VCE= 10V
Switching Times , Resistive Load
ton
Turn-On Time
tstg
Storage Time
tf
Fall Time
IC= 3A ;IB1= -IB2= 0.6A
MIN TYP. MAX UNIT
400
V
1.0
V
1.5
V
0.1 mA
0.1 mA
15
8
11
MHz
1
μs
3
μs
1
μs
isc Websiteï¼www.iscsemi.cn
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