 English |
|
|
|
|
|
|
|
| 2SC2371 Datasheet, PDF (2/3 Pages) Micro Commercial Components – NPN Silicon Power Transistors | |||
| |||
| ◁ |
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=30mA ;IB=3m A
VBE
Base-emitter on voltage
IC=10mA ; VCE=10V
V(BR)CBO Collector-base breakdown voltage
IC=100 A;IE=0
V(BR)CEO Collector-emitter breakdown voltage IC=1mA; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=100 A; IC=0
hFE
DC current gain
IC=10mA ; VCE=10V
ICBO
Collector cut-off current
VCB=200V; IE=0
IEBO
Emitter cut-off current
VEB=4V; IC=0
COB
Output capacitance
IE=0; VCB=30V;f=1MHz
fT
Transition frequency
IE=10mA ; VCB=30V
Product Specification
2SC2371
MIN TYP. MAX UNIT
1.5
V
1.2
V
300
V
300
V
6
V
40
250
0.1
A
0.1
A
3
pF
50
MHz
2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese