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2SC2331 Datasheet, PDF (2/3 Pages) NEC – Silicon Power Transistor
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=1.0A ,IB=0.1A,L=1mH
VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A
VBEsat Base-emitter saturation voltage
IC=1A ;IB=0.1A
ICBO
IEBO
hFE-1
Collector cut-off current
Emitter cut-off current
DC current gain
VCB=100V; IE=0
VEB=5V; IC=0
IC=0.1A ; VCE=5V
hFE-2
DC current gain
IC=1A ; VCE=5V
Switching times resistive load
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=1.0A IB1=- IB2=0.1A
RL=50 ;VCC 50V
‹ hFE-2 Classifications
M
L
K
40-80 60-120 100-200
Product Specification
2SC2331
MIN TYP. MAX UNIT
100
V
0.6
V
1.5
V
10
A
10
A
40
40
200
0.5
s
1.5
s
0.5
s
2
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