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| 2SC2151 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IC=0
VCEsat Collector-emitter saturation voltage IC=10A; IB=2A
VBEsat Base-emitter saturation voltage
IC=10A; IB=2A
ICBO
Collector cut-off current
VCB=500V; IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE
DC current gain
IC=7.5A ; VCE=5V
fT
Transition frequency
IC=0.5A ; VCE=10V
Product Specification
2SC2151
MIN TYP. MAX UNIT
400
V
7
V
1.5
V
2.0
V
0.1 mA
0.1 mA
10
15
MHz
2
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