 English |
|
|
|
|
|
|
|
| 2SC2123 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors | |||
| |||
| ◁ |
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0;
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0;
VCEsat Collector-emitter saturation voltage IC=10A;IB=2.5 A
VBEsat Base-emitter saturation voltage
IC=10A;IB=2.5 A
ICBO
Collector cut-off current
VCB=1000V;IE=0
IEBO
Emitter cut-off current
VEB=7V;IC=0
hFE
DC current gain
IC=8A ; VCE=5V
fT
Transition frequency
IC=0.5A ; VCE=10V
Product Specification
2SC2123
MIN TYP. MAX UNIT
400
V
7
V
3.3
V
2.2
V
1.0
mA
1.0
mA
5
6
MHz
2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese