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| 2SC2085 Datasheet, PDF (2/3 Pages) List of Unclassifed Manufacturers – SILICON PNP TRIPLE-DIFFUSED PLANAR TYPE | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-base breakdown voltage
IC=100μA ;IE=0
V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=100μA ;IC=0
VCEsat Collector-emitter saturation voltage IC=100mA ;IB=10mA
VBE
Base-emitter on voltage
IC=50mA ; VCE=10V
ICEO
Collector cut-off current
VCE=300V;IB=0
ICBO
Collector cut-off current
VCB=300V;IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=10mA ; VCE=10V
hFE -2
DC current gain
IC=50mA ; VCE=10V
COB
Output capacitance
IE=0; VCB=30V;f=1MHz
fT
Transition frequency
IC=20mA ; VCE=30V
 hFE-2 classifications
P
Q
R
30-60 50-100 80-150
Product Specification
2SC2085
MIN TYP. MAX UNIT
300
V
300
V
5
V
5.0
V
1.2
V
20 μA
10 μA
10 μA
30
30
150
8
pF
55
MHz
2
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