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| 2SC1906 Datasheet, PDF (2/4 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial Planar | |||
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC1906
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CBO Collector-Base Breakdown Voltage
IC= 10μA ; IE= 0
30
V
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 3mA ; RBE= â
19
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10μA ; IC= 0
2
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 20mA ; IB= 4mA
ICBO
Collector Cutoff Current
VCB= 10V; IE= 0
1.0
V
0.5 μA
hFE
DC Current Gain
IC= 10mA ; VCE= 10V
40
fT
Current-GainâBandwidth Product
IC= 10mA ; VCE= 10V
600 1000
MHz
COB
Output Capacitance
IE= 0 ; VCB= 10V;f= 1.0MHz
1.0 2.0 pF
rbbâ ⢠CC Base Time Constant
VCB= 10V,IC = 10 mA,f = 31.8 MHz
10 25 ps
PG
Power Gain
VCE = 10 V,IC = 5mA;f = 45MHz
33
dB
PG
Power Gain
VCE = 10 V,IC = 5mA;f = 200MHz
18
dB
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