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| 2SC1413 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistors | |||
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0
V(BR)EBO Emitter-base breakdown votage
IE=1.0mA; IC=0
VCEsat Collector-emitter saturation voltage IC=5 A;IB=1.2 A
VBEsat Base-emitter saturation voltage
IC=5 A;IB=1.2 A
ICBO
Collector cut-off current
VCB=1200V;IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=1A ; VCE=5V
Product Specification
2SC1413
MIN TYP. MAX UNIT
500
V
5
V
10
V
2
V
1.0 mA
1.0 mA
8
2
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