2SB919 Datasheet, PDF (2/4 Pages) Sanyo Semicon Device – 30V/8A High-Speed Switching Applications

Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_(BR)CEO Collector-emitter breakdown voltage I_C=-1mA; R_BE=
V_(BR)CBO Collector-base breakdown voltage
I_C=-1mA; I_E=0
V_(BR)EBO Emitter-base breakdown voltage
I_E=-1mA; I_C=0
V_CEsat Collector-emitter saturation voltage I_C=-3A; I_B=-0.15A
I_CBO
Collector cut-off current
V_CB=-40V; I_E=0
I_EBO
Emitter cut-off current
V_EB=-4V; I_C=0
h_FE-1
DC current gain
I_C=-1A ; V_CE=-2V
h_FE-2
DC current gain
I_C=-4A ; V_CE=-2V
f_T
Transition frequency
I_C=-1A ; V_CE=-5V
Switching times
t_on
Turn-on time
t_stg
Storage time
t_f
Turn-off time
I_C=-4A ; V_CC=-10V
I_B1=-I_B2=-0.2A;R_L=2.5
‹ h_FE-1Classifications
Q
R
S
70-140 100-200 140-280
Product Specification
2SB919
MIN TYP. MAX UNIT
-30
V
-60
V
-6
V
-0.5
V
-0.1 mA
-0.1 mA
70
280
30
120
MHz
0.1
s
0.2
s
0.03
s
2