2SB901 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – Silicon PNP Power Transistor

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB901
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0
V(BR)CBO Collector-Base breakdown voltage IC=-1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A
VBE(on) Base-Emitter On Voltage
IC=- 2A; VCE=-4V
ICBO
Collector Cutoff Current
VCB= -60V; IE= 0
ICEO
Collector Cutoff Current
VCE= -60V; IB= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE
DC Current Gain
IC= -1A ; VCE= -4V
fT
Current-Gain—Bandwidth Product IC=-0.5A ; VCE= -10V
MIN TYP. MAX UNIT
-60
V
-60
V
-6
V
-1.0
V
-1.4
V
-100 μA
-100 μA
-10 μA
40
200
6
MHz
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