2SB898 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – Silicon PNP Power Transistor

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB898
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.375A
VBE(on) Base-Emitter On Voltage
IC= -3A; VCE= -4V
ICBO
IEBO
hFE-1
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
VCB= -50V; IE= 0
VEB= -6V; IC= 0
IC= -1A; VCE= -4V
hFE-2
DC Current Gain
IC= -3A; VCE= -4V
fT
Current-Gain—Bandwidth Product IC= -0.5A ; VCE= -10V
MIN TYP. MAX UNIT
-50
V
-6
V
-1.2
V
-1.8
V
-100 μA
-10 μA
50
200
10
5
MHz
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