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| 2SB506 Datasheet, PDF (2/2 Pages) Savantic, Inc. – Silicon PNP Power Transistors | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SB1018A
ELECTRICAL CHARACTERISTICS
TC=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB=B -0.4A
VBE(sat) Base-Emitter Saturation Voltage
IC= -4A; IB=B -0.4A
ICBO
Collector Cutoff Current
VCB= -100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -1A; VCE= -1V
hFE-2
DC Current Gain
IC= -4A; VCE= -1V
COB
Output Capacitance
IE= 0; VCB= -10V; f= 1MHz
fT
Current-GainâBandwidth Product
IC= -1A; VCE= -4V
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= -3.0A ,IB1= -IB2= -0.3A,
VCC= -30V; RL= 10Ω
MIN TYP. MAX UNIT
-80
V
-0.5 V
-1.4 V
-5 μA
-5 μA
70
240
30
250
pF
10
MHz
0.4
μs
2.5
μs
0.5
μs
 hFE-1 Classifications
O
Y
70-140 120-240
isc Websiteï¼www.iscsemi.cn
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