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| 2SB1568 Datasheet, PDF (2/3 Pages) Rohm – Power Transistor (-80V, -4A) | |||
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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
Product Specification
2SB1568
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-1mA; IB=0
-80
V
V(BR)CBO Collector-base breakdown voltage
IC=-50 A; IE=0
-80
V
V(BR)EBO Emitter-base breakdown voltage
IE=-5mA; IC=0
-7
V
VCEsat Collector-emitter saturation voltage IC=-2A ; IB=-4mA
-1.0 -3.0
V
ICBO
Collector cut-off current
VCB=-80V;IE=0
-100
A
IEBO
Emitter cut-off current
VEB=-5V;IC=0
-3.0 mA
hFE
DC current gain
IC=-2A ; VCE=-3V
1000
10000
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
35
pF
fT
Transition frequency
IC=-0.5A ; VCE=-5V;f=10MHz
12
MHz
2
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