 English |
|
|
|
|
|
|
|
| 2SB1343 Datasheet, PDF (2/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Darlington Power Transistor | |||
| |||
| ◁ |
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
2SB1343
ELECTRICAL CHARACTERISTICS
Tj=25â unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA; IB=B 0
-100
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= -50μA; IE= 0
-100
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB=B -6mA
ICBO
Collector Cutoff Current
VCB= -100V ; IE= 0
-1.5
V
-10 μA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-3
mA
hFE
DC Current Gain
IC= -2A ; VCE= -3V
1000
20000
COB
Output Capacitance
IE= 0; VCB= -10V; ftest= 1MHz
90
fT
Current-GainâBandwidth Product
IE= 0.5A; VCE= -5V; ftest= 10MHz
12
pF
MHz
isc Websiteï¼www.iscsemi.cn
2
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese