2SB1254 Datasheet, PDF (2/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type Darlington(For power amplification)

Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1254
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V_CEO Collector-emitter voltage
I_C=-30mA ; I_B=0
-140
V
V_CEsat Collector-emitter saturation voltage I_C=-6A ;I_B=-6mA
-2.5
V
V_BEsat Base-emitter saturation voltage
I_C=-6A ;I_B=-6mA
-3.0
V
I_CBO
Collector cut-off current
V_CB=-160V; I_E=0
-100
A
I_CEO
Collector cut-off current
V_CE=-140V; I_B=0
-100
A
I_EBO
Emitter cut-off current
V_EB=-5V; I_C=0
-100
A
h_FE-1
DC current gain
I_C=-1A ; V_CE=-5V
2000
h_{FE -2}
DC current gain
I_C=-6A ; V_CE=-5V
5000
30000
f_T
Transition frequency
I_C=-0.5A ; V_CE=-10V;f=1MHz
20
MHz
Switching times
t_on
Turn-on time
t_s
Storage time
t_f
Fall time
I_C=-6A; V_CC=50V
I_B1=-I_B2=-6mA
1.0
s
1.5
s
1.2
s
2